Cressler, J. D. (2008). SiGe and Si strained-layer epitaxy for silicon heterostructure devices. CRC Press/Taylor & Francis.
Chicago Style (17th ed.) CitationCressler, John D. SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices. Boca Raton: CRC Press/Taylor & Francis, 2008.
MLA (8th ed.) CitationCressler, John D. SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices. CRC Press/Taylor & Francis, 2008.
Warning: These citations may not always be 100% accurate.