SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

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Bibliographic Details
Other Authors: Cressler, John D.
Format: Book
Language:English
Published: Boca Raton : CRC Press/Taylor & Francis, ©2008.
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Description
Item Description:"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--Title page verso.
Physical Description:1 volume (various pagings) : illustrations ; 26 cm
Bibliography:Includes bibliographical references and index.
ISBN:9781420066852
1420066854
1420066862
9781420066869