SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

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Bibliographic Details
Other Authors: Cressler, John D.
Format: Book
Language:English
Published: Boca Raton : CRC Press/Taylor & Francis, ©2008.
Subjects:
Bipolar transistors > Materials.
Heterostructures.
Silicon > Electric properties.
Epitaxy.
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