SiGe and Si strained-layer epitaxy for silicon heterostructure devices /
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| Format: | Book |
| Language: | English |
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Boca Raton :
CRC Press/Taylor & Francis,
©2008.
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Table of Contents:
- The big picture / John D. Cressler
- A brief history of the field / John D. Cressler
- Overview : SiGe and Si strained-layer epitaxy / John D. Cressler
- Strained SiGe and Si Epitaxy / Bernd Tillack and Peter Zaumseil
- Si-SiGe(C) epitaxy by RTCVD / Didier Dutartre [and others]
- MBE growth techniques / Michael Oehme and Erich Kasper
- UHV/CVD growth techniques / Thomas N. Adam
- Defects and diffusion in SiGe and strained Si / Anthony R. Peaker and V.P. Markevich
- Stability constraints in SiGe epitaxy / Armin Fischer
- Electronic properties of strained Si/SiGe and Si[subscript1-y]C[subscript]y alloys / Judy L. Hoyt
- Carbon doping of SiGe / H. Jörg Osten
- Contact metallization on Silicon-Germanium / C.K. Maiti
- Selective etching techniques for SiGe/Si / S. Monfray, Thomas Skotnicki, and S. Borel.