Synthesis and characterization of Cu2Zn1-XCdxSnS4 quinternary alloy structure nanostructures using sol-gel electrospining technique /
The objective is as the followings to study of various Cd concentration on the structural, morphological, optical and electrical properties of the Cu2Zn1-xCdxSnS4 quinternary alloy nanostructures using spin coating and electrospinning technique grew on glass substrate; to research the of copper (...
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Հիմնական հեղինակ: | |
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Համատեղ հեղինակ: | |
Ձևաչափ: | Թեզիս Գիրք |
Լեզու: | English |
Հրապարակվել է: |
Perlis, Malaysia
Institute of Nano Electronic Engineering
2016.
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Առցանց հասանելիություն: | Click here to view the full text content |
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Չկան պիտակներ, Եղեք առաջինը, ով նշում է այս գրառումը!
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Ամփոփում: | The objective is as the followings to study of various Cd concentration on the structural, morphological, optical and electrical properties of the Cu2Zn1-xCdxSnS4 quinternary alloy nanostructures using spin coating and electrospinning technique grew on glass substrate; to research the of copper (Cu) concentration on the structural, morphological and optical properties of Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures grew on glass substrate; to elaborate the effect of etching times porous silicon (PS) as substrate prepared by electrochemical etching method followed by deposited Cu2Zn1-xCdxSnS4 for characterization, analysis, optical properties and electrical properties of current-voltage (I-V) characteristics and UV photoresponse of the Ag/n-PS /Cu2Zn1-xCdxSnS4/Ag heterojunction when x= 0, 0.6, 1; to investigate the effect of various Cd concentretion on the structural, morphological and optical properties of Cu2Zn1-xCdxSnS4 quinternary alloy nanostructures using spin coating technique prepared on oxidized silicon (SiO2) substrate and their application in the detection of DNA sequence from Dengue type-2; to study the effect of various Cd concentration on the structural, morphological, optical and electrical properties of the Cu2Zn1-xCdxSnS4 quinternary alloy nanostructures using spin coating technique grew on GaN substrate . |
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Ֆիզիկական նկարագրություն: | xiv, 97 pages colour illustrations 30 cm. |
Մատենագիտություն: | Includes bibliographical references. |