Silicon nanowire sensor from electron beam litography : design, fabrication and characterization /
This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. There are three objectives that applied to this research work. The first objective is to design masks using GDSII Ed...
Պահպանված է:
| Հիմնական հեղինակ: | |
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| Համատեղ հեղինակ: | |
| Ձևաչափ: | Թեզիս Գիրք |
| Լեզու: | English |
| Հրապարակվել է: |
Perlis, Malaysia
School of Microelectronic
2011.
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| Խորագրեր: | |
| Ցուցիչներ: |
Ավելացրեք ցուցիչ
Չկան պիտակներ, Եղեք առաջինը, ով նշում է այս գրառումը!
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| Ամփոփում: | This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. There are three objectives that applied to this research work. The first objective is to design masks using GDSII Editor Software and AutoCAD, respectively. The second objective is to apply a top-down approach method consists of electron beam and conventional mixed lithography process for device fabrication. Then, the final objective of this work is to analyze the electrical characteristic of the fabricated device in terms of I-V relations using semiconductor parameter analyzer (SPA). |
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| Ֆիզիկական նկարագրություն: | 103 pages illustrations 30 cm |
| Մատենագիտություն: | Includes bibliographical references (pages 91-97). |