Silicon nanowire sensor from electron beam litography : design, fabrication and characterization /
This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. There are three objectives that applied to this research work. The first objective is to design masks using GDSII Ed...
Guardado en:
| Autor principal: | |
|---|---|
| Autor Corporativo: | |
| Formato: | Tesis Libro |
| Lenguaje: | English |
| Publicado: |
Perlis, Malaysia
School of Microelectronic
2011.
|
| Materias: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sea el primero en dejar un comentario!