Silicon nanowire sensor from electron beam litography : design, fabrication and characterization /
This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. There are three objectives that applied to this research work. The first objective is to design masks using GDSII Ed...
Sábháilte in:
| Príomhchruthaitheoir: | |
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| Údar corparáideach: | |
| Formáid: | Tráchtas LEABHAR |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Perlis, Malaysia
School of Microelectronic
2011.
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| Ábhair: | |
| Clibeanna: |
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