Fabrication and characterization of engineered tunnel barrier for nonvolatile memory application /

This study focuses on the Variable Oxide Thickness (VARIOT) approach of engineered tunnel barrier where the asymmetrical VARIOT structure with the effective oxide thickness (EOT) ranging from 6 nm to 14 nm were studied in the form of MOS capacitor structure.

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Bibliographic Details
Main Author: Zarimawaty Zailan (Author)
Corporate Author: Universiti Malaysia Perlis
Format: Thesis Book
Language:English
Published: Perlis, Malaysia School of Microelectronic Engineering 2012.
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