Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).
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| Autor principal: | |
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| Format: | Electrònic Software Base de dades |
| Idioma: | English |
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| Sumari: | The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM). |
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| Descripció de l’ítem: | Final Year Project |
| Descripció física: | 1 CD-ROM 4 3/4 in. |