Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).
Αποθηκεύτηκε σε:
| Κύριος συγγραφέας: | |
|---|---|
| Μορφή: | Ηλεκτρονική πηγή Λογισμικό Βάση Δεδομένων |
| Γλώσσα: | English |
| Θέματα: | |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|
| Περίληψη: | The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM). |
|---|---|
| Περιγραφή τεκμηρίου: | Final Year Project |
| Φυσική περιγραφή: | 1 CD-ROM 4 3/4 in. |