Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).
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| Format: | Electrònic Software Base de dades |
| Idioma: | English |
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| LEADER | 01350nmi a2200241 a 4500 | ||
|---|---|---|---|
| 001 | vtls000051347 | ||
| 003 | MY-KaKUK | ||
| 005 | 20210816100143.0 | ||
| 007 | co bg llla a | ||
| 008 | 111129s2008 my f d 000 0 eng d | ||
| 039 | 9 | |a 201111291236 |b VLOAD |c 201111161319 |d VLOAD |c 201007271455 |d AYAR |c 200909251145 |d ABO |y 200904150931 |z SNSA | |
| 090 | 0 | 0 | |a TK7874 |b M7N974 2008 |
| 100 | 0 | |a Nur Syuhada Md. Desa. |e author | |
| 245 | 1 | 0 | |a Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM |h [electronic resource] / |c Nur Syuhada Md. Desa. |
| 264 | 0 | |a Kangar, Perlis |b School of Microelectronic Engineering, Universiti Malaysia Perlis |c 2008. | |
| 300 | |a 1 CD-ROM |c 4 3/4 in. | ||
| 500 | |a Final Year Project | ||
| 520 | |a The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM). | ||
| 650 | 0 | |a Microelectronics. | |
| 949 | |a VIRTUAITEM |d 30000 |f 1 |x 701 |6 902000235 |a TK7874 M7N974 2008 | ||
| 942 | |2 lcc |c COMPFILE | ||
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