Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
The scope of this final year project is to get a high aspect ratio for etch profile using wet etching technique. After etching process using Buffered Oxide Etch (BOE), the structure profile had to viewed under profiler meter, Atomic Forces Microscopy (AFM) Scanning Electron Microscope (SEM).
Saved in:
Hovedforfatter: | Nur Syuhada Md. Desa (Author) |
---|---|
Format: | Electronisk Software Database |
Sprog: | English |
Fag: | |
Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|
Lignende værker
-
Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
af: Noor Aini Hamimah Abd. Rahim -
Study of the effect of different gases parameter in dry etching process on etch rate profile
af: Zaharah Mohamad -
MIMOS Semiconductor (M) Sdn. Bhd. (MySem)
af: Mohammad Hifzan Saibudin -
Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
af: Mohamad Fadzli Ali -
Nanostructure formation using sem based e-beam lithography (EBL) technique : buffered oxide etch (BOE) profile
af: Nur Nazihah Halemi