Optimization of nitride deposition process using Taguchi method
This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module fr...
Αποθηκεύτηκε σε:
| Κύριος συγγραφέας: | |
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| Μορφή: | Ηλεκτρονική πηγή Λογισμικό Βάση Δεδομένων |
| Γλώσσα: | English |
| Θέματα: | |
| Ετικέτες: |
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| Περίληψη: | This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module from the resources of [a]-[e]. The Taguchi method is a simple and convenient way to explore the process window as it can minimize the number and cost of experiments. |
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| Περιγραφή τεκμηρίου: | Final Year Project |
| Φυσική περιγραφή: | 1 CD-ROM 4 3/4 in. |