Optimization of nitride deposition process using Taguchi method

This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module fr...

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書誌詳細
第一著者: Low, Zen Shiang (著者)
フォーマット: 電子媒体 ソフトウェア データベース
言語:English
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その他の書誌記述
要約:This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module from the resources of [a]-[e]. The Taguchi method is a simple and convenient way to explore the process window as it can minimize the number and cost of experiments.
記述事項:Final Year Project
物理的記述:1 CD-ROM 4 3/4 in.