Optimization of nitride deposition process using Taguchi method
This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module fr...
Đã lưu trong:
Tác giả chính: | |
---|---|
Định dạng: | Điện tử Phần mềm Cơ sở dữ liệu |
Ngôn ngữ: | English |
Những chủ đề: | |
Các nhãn: |
Thêm thẻ
Không có thẻ, Là người đầu tiên thẻ bản ghi này!
|
Tóm tắt: | This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module from the resources of [a]-[e]. The Taguchi method is a simple and convenient way to explore the process window as it can minimize the number and cost of experiments. |
---|---|
Mô tả sách: | Final Year Project |
Mô tả vật lý: | 1 CD-ROM 4 3/4 in. |