Optimization of nitride deposition process using Taguchi method

This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module fr...

Повний опис

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Бібліографічні деталі
Автор: Low, Zen Shiang (Автор)
Формат: Електронний ресурс Програмне забезпечення База даних
Мова:English
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Опис
Резюме:This final year project is mainly focused on obtaining the most optimize parameters of PECVD Si3N4 deposition process by using DOE. The Taguchi method of DOE will be used in performing optimization of the deposition process. Raw data for the deposition process is provided by the deposition module from the resources of [a]-[e]. The Taguchi method is a simple and convenient way to explore the process window as it can minimize the number and cost of experiments.
Опис примірника:Final Year Project
Фізичний опис:1 CD-ROM 4 3/4 in.