Electrical characterization of 0.13℗æm CMOS transistor using TSUPREM-4 and MEDICI
This final year project is about the use of Synopsys' Taurus TCAD (TSUPREM-4 and PMOS transistor).This project also includes how the process simulation by TSUPREM-4 to produce an output file containing complete structure, mesh and doping information that can be read into MEDICI device simulator...
Сохранить в:
Главный автор: | Rusnita Rafee (Автор) |
---|---|
Формат: | Электронный ресурс Программное обеспечение База данных |
Язык: | English |
Предметы: | |
Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|
Схожие документы
-
Electrical characterization of 0.15um CMOS transistor using tsuprem-4 and medici
по: Low, Pooi Lam -
Electrical characterization of 0.13℗æm NMOS transistor with retrograde well and halo implant structure respectively
по: Anas Redzuan Mokhtar -
Coherent effect on LOCOS and STI technique for 0.18℗æm CMOS technology using taurus workbench
по: Wan Shafie Wan Sulaiman -
CMOS Inverter-Circuit Characterization and Performance Estimation/
по: Chew, Chee Ting
Опубликовано: (2013) -
Gate oxide interrity (GOI) characterization for deep submicron CMOS device
по: Norain Bt Mohd Saad