Effect of different dielectric materials for ultrathin oxide

This final year project is about performance of ultrathin gate oxide using Silicon Nitride to replace the Silicon Dioxide as dielectric materials and use the Synopsys's Taurus TCAD tools to fabricate virtual semiconductor devices as a virtual fabrication environment.

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Bibliografische gegevens
Hoofdauteur: Zarimawaty Zailan (Auteur)
Formaat: Elektronisch Software Databank
Taal:English
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Omschrijving
Samenvatting:This final year project is about performance of ultrathin gate oxide using Silicon Nitride to replace the Silicon Dioxide as dielectric materials and use the Synopsys's Taurus TCAD tools to fabricate virtual semiconductor devices as a virtual fabrication environment.
Beschrijving item:Final Year Project
Fysieke beschrijving:1 CD-ROM 4 3/4 in.