Effect of different dielectric materials for ultrathin oxide
This final year project is about performance of ultrathin gate oxide using Silicon Nitride to replace the Silicon Dioxide as dielectric materials and use the Synopsys's Taurus TCAD tools to fabricate virtual semiconductor devices as a virtual fabrication environment.
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| Format: | Electronic Software Database |
| Language: | English |
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| Summary: | This final year project is about performance of ultrathin gate oxide using Silicon Nitride to replace the Silicon Dioxide as dielectric materials and use the Synopsys's Taurus TCAD tools to fabricate virtual semiconductor devices as a virtual fabrication environment. |
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| Item Description: | Final Year Project |
| Physical Description: | 1 CD-ROM 4 3/4 in. |