Effect of different dielectric materials for ultrathin oxide
This final year project is about performance of ultrathin gate oxide using Silicon Nitride to replace the Silicon Dioxide as dielectric materials and use the Synopsys's Taurus TCAD tools to fabricate virtual semiconductor devices as a virtual fabrication environment.
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic Software Database |
| Language: | English |
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
System Under Maintenance
Our Library Management System is currently under maintenance.
Holdings and item availability information is currently unavailable. Please accept our apologies for any inconvenience this may cause and contact us for further assistance: