Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point p...
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| Autor principal: | |
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| Format: | Electrònic Software Base de dades |
| Idioma: | English |
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| Sumari: | This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point probe may be used to measure the bulk resistivity of starting wafers and the sheet resistance of shallow diffused layers. |
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| Descripció de l’ítem: | Final Year Project |
| Descripció física: | 1 CD-ROM 4 3/4 in. |