Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point p...
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| LEADER | 01497nmi a2200241 a 4500 | ||
|---|---|---|---|
| 001 | vtls000051348 | ||
| 003 | MY-KaKUK | ||
| 005 | 20210816100326.0 | ||
| 007 | co bg llla a | ||
| 008 | 111129s2008 my f d 000 0 eng d | ||
| 039 | 9 | |a 201111291732 |b VLOAD |c 201111161332 |d VLOAD |c 201007271459 |d AYAR |c 200909251145 |d ABO |y 200904150933 |z SNSA | |
| 090 | 0 | 0 | |a TK7874 |b M7N974 2008 |
| 100 | 0 | |a Nursyida Azuddin. |e author | |
| 245 | 1 | 0 | |a Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization |h [electronic resource] / |c Nursyida Azuddin. |
| 264 | 0 | |a Kangar, Perlis |b School of Microelectronic Engineering, Universiti Malaysia Perlis |c 2008. | |
| 300 | |a 1 CD-ROM |c 4 3/4 in. | ||
| 500 | |a Final Year Project | ||
| 520 | |a This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point probe may be used to measure the bulk resistivity of starting wafers and the sheet resistance of shallow diffused layers. | ||
| 650 | 0 | |a Microelectronics. | |
| 949 | |a VIRTUAITEM |d 30000 |f 1 |x 701 |6 902000236 |a TK7874 M7N974 2008 | ||
| 942 | |2 lcc |c COMPFILE | ||
| 999 | |c 93173 |d 93173 | ||
| 952 | |0 0 |1 0 |2 lcc |4 0 |6 TK7874 M7 N974 02008 |7 0 |9 90829 |a PTSFP |b PTSFP |c 8 |d 2021-08-16 |l 0 |o TK7874 M7N974 2008 |p 902000236 |r 2021-08-16 |t 1 |w 2021-08-16 |y COMPFILE | ||