Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization

Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization

This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point p...

Disgrifiad llawn

Wedi'i Gadw mewn:

Manylion Llyfryddiaeth
Prif Awdur:	Nursyida Azuddin (Awdur)
Fformat:	Electronig Meddalwedd Cronfa ddata
Iaith:	English
Pynciau:	Microelectronics.
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

Eitemau Tebyg

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Electrical characterization of 0.13℗æm NMOS transistor with retrograde well and halo implant structure respectively
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Fabrication, characterization and optimization of in-house mosfet transistor using spin on dopant technique /
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Advanced device modeling and simulation /
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