Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization

Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization

This final year project cover of fabrication and simulation of pnp bipolar transistor based on electrical characterization and dopant concentration. From fabrication, the process will began from design mask layout, ion implantation, photolithography, diffusion and metallization. Then, a four point p...

Полное описание

Сохранить в:

Библиографические подробности
Главный автор:	Nursyida Azuddin (Автор)
Формат:	Электронный ресурс Программное обеспечение База данных
Язык:	English
Предметы:	Microelectronics.
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

Схожие документы

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
по: Mohd Rosydi Zakaria

Fabrication of 50 ¡Łm transistor and AINiAu interconnection process
по: Shaffie Husin

Simulation, fabrication and electrical characterization of p-Si capacitor design structure
по: Cherly, She Siew Yuet

The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
по: Yip, Siew Ling

The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
по: Siti Norhaida Abdul Rahman

Effect of annealing temperature and dopant concertration on the surface layer of indium doped Ba0.5Sr0.5Ti03 thin film
по: Noor Khairul Anuar Johari

Electrical characterization of 0.13℗æm CMOS transistor using TSUPREM-4 and MEDICI
по: Rusnita Rafee

Electrical characterization of 0.15um CMOS transistor using tsuprem-4 and medici
по: Low, Pooi Lam

The study of the effect of MOS transistor scaling on the critical device parameters
по: Zazurina Abd Rahman

Electrical characterization of 0.13℗æm NMOS transistor with retrograde well and halo implant structure respectively
по: Anas Redzuan Mokhtar

Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique /
по: Marlia Morsin
Опубликовано: (2004)

Fabrication, characterization and optimization of in-house mosfet transistor using spin on dopant technique /
Опубликовано: (2010)

Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
по: Mohd Adam Alias

Design, fabricating and characterizing a microfluidic capacitor
по: Anthonysamy, Raymond Anthony

Microfluidic poly-si electrodes capacitor (fabricate & testing)
по: Esmal Fhadly Abd Malek

Device simulation of silicon germanium heterojunction bipolar transistor
по: Lili Juliana Bt Abu Bakar

Simulation on parameter and characteristics extraction between two simulation packages (synopsys and pspice)
по: Nor Aznin Sakrani

Design and simulation of piezoresistive pressure sensor
по: Mohd Hilmi Mohd Nor

Design and simulation of PZT piezoelectric microphone
по: Muhammad Aiman Ab. Mahat

Design and simulation of piezoresistive tectile sensor
по: Nahmar Harun

Design and simulation of silicon-based magnetic sensor/
по: Nor Azlan Mohamed
Опубликовано: (2011)

Design, Simulation and Characterization of Moly Permalloy based Electromagnetic sensor/
по: Palianysamy, Moganraj
Опубликовано: (2011)

Fabrication and characterization of barium strontium titanate (BA1-XSRXTI03BST) for heat sensor application
по: Mohd Hafiz Shaari

Advanced device modeling and simulation /
Опубликовано: (2003)

Design and simulation of CMOS operational amplifier using mentor graphics tool
по: Ramalu, Jegatheesan Sri

Simulation for forming shallow trench isolation in the Ic using TCAD tools
по: Mohd Faiz Mohd Fauzan

Design a current mirror using body driven technique
по: Siti Zawana Abdul Rani

Improvement of SiGe HBT design and technology performance using device simulation
по: Nurradila Rahman

Simulation of ion implantation using Monte Carlo method for investigation on ion trajectories
по: Zainab Ramli

Simulation dan design of 8-BIT successive approximation analog-To-Digital converter/
по: Mohd Farid Kamil Fadzil
Опубликовано: (2011)

Simulation on effect of different types of channel/ drain engineering structure on MOS device performance
по: Norazlina Mohd Amin

Investigation and modelling of boron diffusion reduction in silicon by fluorine implantation using numerical simulation
по: Chuah, Soo Kiet

Simulation of 0.35 Um NMOS process based on UniMAP Cleanroom facilities
по: Izny Atikah Ahmad Fahmi

Random number generator simulation and digital IC design from inverse congruential algorithm/
по: Ahmad Firdaus Mohd Razy
Опубликовано: (2011)

The effect of process parameters on metal step coverage for aluminum (AI) by evaporation technique
по: Noraishah Azman

Low power multiplier accumulator (MAC) unit using sleepy stack technique
по: Aaron Selvam Thangamany

Study and design the current mirror using bulk-driven technique for low voltage analog
по: Mohd Faidzul Bukhari Mohd Kanafiah

A Study of Proper Integrated Circuit (IC) Layout Techniques for a Parallel Adder/
по: Kau, Zee Shuang
Опубликовано: (2011)

Synthesis, layout design and simulation of 8-bit serial peripheral interface (SPI) using Leonardo spectrum and mentor graphics
по: Siti Aifa Zafirah Ahmad

Coherent effect on LOCOS and STI technique for 0.18℗æm CMOS technology using taurus workbench
по: Wan Shafie Wan Sulaiman