Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...
保存先:
| 第一著者: | |
|---|---|
| フォーマット: | 電子媒体 ソフトウェア データベース |
| 言語: | English |
| 主題: | |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|
| 要約: | This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate parameter for the thickness required. |
|---|---|
| 記述事項: | Final Year Project |
| 物理的記述: | 1 CD-ROM 4 3/4 in. |