Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...

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Bibliographic Details
Main Author: Mohamad Fadzli Ali (Author)
Format: Electronic Software Database
Language:English
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LEADER 01389nmi a2200241 a 4500
001 vtls000051315
003 MY-KaKUK
005 20210816100340.0
007 co bg llla a
008 111129s2008 my f d eng d
039 9 |a 201111291743  |b VLOAD  |c 201111161333  |d VLOAD  |c 201007231546  |d AYAR  |c 200909181108  |d ABO  |y 200904131056  |z SNSA 
090 0 0 |a TK7874  |b M7F146 2008 
100 0 |a Mohamad Fadzli Ali.  |e author 
245 1 0 |a Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method  |h [electronic resource] /  |c Mohamad Fadzli Ali. 
264 0 |a Kangar, Perlis  |b School of Microelectronic Engineering, Universiti Malaysia Perlis  |c 2008. 
300 |a 1 CD-ROM  |c 4 3/4 in. 
500 |a Final Year Project 
520 |a This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate parameter for the thickness required. 
650 0 |a Microelectronics. 
949 |a VIRTUAITEM  |d 30000  |f 1  |x 701  |6 902000208  |a TK7874 M7F146 2008 
942 |2 lcc  |c COMPFILE 
999 |c 93344  |d 93344 
952 |0 0  |1 0  |2 lcc  |4 0  |6 TK7874 M7 F146 02008  |7 0  |9 91045  |a PTSFP  |b PTSFP  |c 8  |d 2021-08-16  |l 0  |o TK7874 M7F146 2008  |p 902000208  |r 2021-08-16  |t 1  |w 2021-08-16  |y COMPFILE