Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...
Wedi'i Gadw mewn:
Prif Awdur: | Mohamad Fadzli Ali (Awdur) |
---|---|
Fformat: | Electronig Meddalwedd Cronfa ddata |
Iaith: | English |
Pynciau: | |
Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
Eitemau Tebyg
-
Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
gan: Noor Aini Hamimah Abd. Rahim -
Method of measurement of LTCC metallization thickness
gan: Lee, Soo Khiang -
Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
gan: Nur Syuhada Md. Desa -
Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
gan: Mohd Adam Alias -
Study of the temperature effect on thickness and surface roughness of Si02
gan: Mohd Azdi Asis