Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method

This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...

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书目详细资料
主要作者:	Mohamad Fadzli Ali (Author)
格式:	电子软件数据库
语言:	English
主题:	Microelectronics.
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