Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
This final year project focused on four goals: to study the dry and wet oxidation thickness, to grow a thin layer of silicon dioxide (SiO2) on Si wafer, to determine the parameter required for thickness needed, and to compare with the simulation and theoretical thickness to achieve the most accurate...
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic Software Database |
| Language: | English |
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
System Under Maintenance
Our Library Management System is currently under maintenance.
Holdings and item availability information is currently unavailable. Please accept our apologies for any inconvenience this may cause and contact us for further assistance: