Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
Αποθηκεύτηκε σε:
| Κύριος συγγραφέας: | |
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| Μορφή: | Ηλεκτρονική πηγή Λογισμικό Βάση Δεδομένων |
| Γλώσσα: | English |
| Θέματα: | |
| Ετικέτες: |
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| Περίληψη: | In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity. |
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| Περιγραφή τεκμηρίου: | Final Year Project |
| Φυσική περιγραφή: | 1 CD-ROM 4 3/4 in. |