Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
Sábháilte in:
| Príomhchruthaitheoir: | |
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| Formáid: | Leictreonach Bogearraí Bunachar sonraí |
| Teanga: | English |
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| Clibeanna: |
Cuir clib leis
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
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| Achoimre: | In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity. |
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| Cur síos ar an mír: | Final Year Project |
| Cur síos fisiciúil: | 1 CD-ROM 4 3/4 in. |