Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
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| Format: | Electronic Software Database |
| Language: | English |
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| LEADER | 01339nmi a2200241 a 4500 | ||
|---|---|---|---|
| 001 | vtls000051330 | ||
| 003 | MY-KaKUK | ||
| 005 | 20210816100351.0 | ||
| 007 | co bg llla a | ||
| 008 | 111129s2008 my f d eng d | ||
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| 090 | 0 | 0 | |a TK7874 |b M7R841 2008 |
| 100 | 0 | |a Mohd Rosydi Zakaria. |e author | |
| 245 | 1 | 0 | |a Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique |h [electronic resource] / |c Mohd Rosydi Zakaria. |
| 264 | 0 | |a Kangar, Perlis |b School of Microelectronic Engineering, Universiti Malaysia Perlis |c 2008. | |
| 300 | |a 1 CD-ROM |c 4 3/4 in. | ||
| 500 | |a Final Year Project | ||
| 520 | |a In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity. | ||
| 650 | 0 | |a Microelectronics. | |
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| 942 | |2 lcc |c COMPFILE | ||
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