Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.

Saved in:
Bibliographic Details
Main Author: Mohd Rosydi Zakaria (Author)
Format: Electronic Software Database
Language:English
Subjects:
Tags: Add Tag
No Tags, Be the first to tag this record!
LEADER 01339nmi a2200241 a 4500
001 vtls000051330
003 MY-KaKUK
005 20210816100351.0
007 co bg llla a
008 111129s2008 my f d eng d
039 9 |a 201111291743  |b VLOAD  |c 201111161333  |d VLOAD  |c 201007221517  |d AYAR  |c 201007221517  |d AYAR  |y 200904131638  |z SNSA 
090 0 0 |a TK7874  |b M7R841 2008 
100 0 |a Mohd Rosydi Zakaria.  |e author 
245 1 0 |a Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique  |h [electronic resource] /  |c Mohd Rosydi Zakaria. 
264 0 |a Kangar, Perlis  |b School of Microelectronic Engineering, Universiti Malaysia Perlis  |c 2008. 
300 |a 1 CD-ROM  |c 4 3/4 in. 
500 |a Final Year Project 
520 |a In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity. 
650 0 |a Microelectronics. 
949 |a VIRTUAITEM  |d 30000  |f 1  |x 701  |6 902000220  |a TK7874 M7R841 2008 
942 |2 lcc  |c COMPFILE 
999 |c 93478  |d 93478 
952 |0 0  |1 0  |2 lcc  |4 0  |6 TK7874 M7 R841 02008  |7 0  |9 91203  |a PTSFP  |b PTSFP  |c 8  |d 2021-08-16  |l 0  |o TK7874 M7R841 2008  |p 902000220  |r 2021-08-16  |t 1  |w 2021-08-16  |y COMPFILE