Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.

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Bibliografski detalji
Glavni autor:	Mohd Rosydi Zakaria (Autor)
Format:	Elektronički Softver Baza podataka
Jezik:	English
Teme:	Microelectronics.
Oznake:	Dodaj oznaku Bez oznaka, Budi prvi tko označuje ovaj zapis!

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