Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
محفوظ في:
المؤلف الرئيسي: | Mohd Rosydi Zakaria (مؤلف) |
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التنسيق: | الكتروني برمجيات قاعدة البيانات |
اللغة: | English |
الموضوعات: | |
الوسوم: |
إضافة وسم
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مواد مشابهة
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Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
بواسطة: Nursyida Azuddin -
The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
بواسطة: Yip, Siew Ling -
Formation of shallow junction by liquid dopant diffusion
بواسطة: Nor Faizah Nordin -
Development of p-n junction diode using spin-on dopant (sod) method .
بواسطة: Syarifah Nurul Asmah Syed Mahmud
منشور في: (2018) -
The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
بواسطة: Siti Norhaida Abdul Rahman