Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.

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Dades bibliogràfiques
Autor principal:	Mohd Rosydi Zakaria (Autor)
Format:	Electrònic Software Base de dades
Idioma:	English
Matèries:	Microelectronics.
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!

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