Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
Αποθηκεύτηκε σε:
Κύριος συγγραφέας: | Mohd Rosydi Zakaria (Συγγραφέας) |
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Μορφή: | Ηλεκτρονική πηγή Λογισμικό Βάση Δεδομένων |
Γλώσσα: | English |
Θέματα: | |
Ετικέτες: |
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Παρόμοια τεκμήρια
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Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
ανά: Nursyida Azuddin -
The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
ανά: Yip, Siew Ling -
Formation of shallow junction by liquid dopant diffusion
ανά: Nor Faizah Nordin -
Development of p-n junction diode using spin-on dopant (sod) method .
ανά: Syarifah Nurul Asmah Syed Mahmud
Έκδοση: (2018) -
The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
ανά: Siti Norhaida Abdul Rahman