Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
Sábháilte in:
Príomhchruthaitheoir: | Mohd Rosydi Zakaria (Údar) |
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Formáid: | Leictreonach Bogearraí Bunachar sonraí |
Teanga: | English |
Ábhair: | |
Clibeanna: |
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Míreanna comhchosúla
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Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
de réir: Nursyida Azuddin -
The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
de réir: Yip, Siew Ling -
Formation of shallow junction by liquid dopant diffusion
de réir: Nor Faizah Nordin -
Development of p-n junction diode using spin-on dopant (sod) method .
de réir: Syarifah Nurul Asmah Syed Mahmud
Foilsithe / Cruthaithe: (2018) -
The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
de réir: Siti Norhaida Abdul Rahman