Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.
שמור ב:
מחבר ראשי: | Mohd Rosydi Zakaria (Author) |
---|---|
פורמט: | אלקטרוני תכנה Database |
שפה: | English |
נושאים: | |
תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|
פריטים דומים
-
Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
מאת: Nursyida Azuddin -
The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
מאת: Yip, Siew Ling -
Formation of shallow junction by liquid dopant diffusion
מאת: Nor Faizah Nordin -
Development of p-n junction diode using spin-on dopant (sod) method .
מאת: Syarifah Nurul Asmah Syed Mahmud
יצא לאור: (2018) -
The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
מאת: Siti Norhaida Abdul Rahman