Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.

Salvato in:

Dettagli Bibliografici
Autore principale:	Mohd Rosydi Zakaria (Autore)
Natura:	Elettronico Software Database
Lingua:	English
Soggetti:	Microelectronics.
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne! !

Documenti analoghi

Fabrication and simulation of pnp bipolar transistor basedvon spin on dopant technique and electrical characterrization
di: Nursyida Azuddin

The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
di: Yip, Siew Ling

Formation of shallow junction by liquid dopant diffusion
di: Nor Faizah Nordin

Development of p-n junction diode using spin-on dopant (sod) method .
di: Syarifah Nurul Asmah Syed Mahmud
Pubblicazione: (2018)

The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
di: Siti Norhaida Abdul Rahman

Effect of annealing temperature and dopant concertration on the surface layer of indium doped Ba0.5Sr0.5Ti03 thin film
di: Noor Khairul Anuar Johari

Simulasi bagi pembentukan simpangan cetek menggunakan resapan dopan daripada SOD (Spin On Dopant)
di: Fauziyah Salehuddin
Pubblicazione: (2003)

Simulasi bagi pembentukan simpangan cetek menggunakan resapan dopan daripada SOD (Spin On Dopant)
di: Fauziyah Salehuddin
Pubblicazione: (2003)

Investigation and modelling of boron diffusion reduction in silicon by fluorine implantation using numerical simulation
di: Chuah, Soo Kiet

Dopants and defects in semiconductors
di: McCluskey, Matthew D.
Pubblicazione: (2012)

Dopants and defects in semiconductors /
di: Mccluskey, Matthew D.
Pubblicazione: (2012)

Dopants and defects in semiconductors
di: McCluskey, Matthew D.
Pubblicazione: (2012)

Characterization of diffusion process using phosphorus dopant in diffusion furnace module /
di: Nurul Ikhwani Adnan
Pubblicazione: (2009)

A study on surface roughness and morphology of Gallium Oxide Doped Ba0.5 Sr0.5 Ti03 thin film
di: Fadrul Hisham Mohd Fauzi

Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
di: Mohamad Fadzli Ali

Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique /
di: Marlia Morsin
Pubblicazione: (2004)

Fabrication, characterization and optimization of in-house mosfet transistor using spin on dopant technique /
Pubblicazione: (2010)

Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
di: Nur Syuhada Md. Desa

Thin polycrystalline silicon process development
di: Muniyati Pakhuruddin

Effect of diffusion coefficient and junction depth on variation of temperature and energy
di: Nur Ruzana Bohari

Design and simulation of silicon-based magnetic sensor/
di: Nor Azlan Mohamed
Pubblicazione: (2011)

Study and design the current mirror using bulk-driven technique for low voltage analog
di: Mohd Faidzul Bukhari Mohd Kanafiah

Reactive ion etching (RIE) etched wet-silica-on-silicon analysis for fluidwettability
di: Noor Aini Hamimah Abd. Rahim

Design a current mirror using body driven technique
di: Siti Zawana Abdul Rani

A Study of Proper Integrated Circuit (IC) Layout Techniques for a Parallel Adder/
di: Kau, Zee Shuang
Pubblicazione: (2011)

Low power multiplier accumulator (MAC) unit using sleepy stack technique
di: Aaron Selvam Thangamany

Study and design infrared beacon for the blind
di: Mohd Fadzlie Rasit

Coherent effect on LOCOS and STI technique for 0.18℗æm CMOS technology using taurus workbench
di: Wan Shafie Wan Sulaiman

Design and analysis of low power ALU unit, program counter and instruction register using sleepy stack technique
di: Wan Nurul Liyana Wan Zulkefle

Study of the temperature effect on thickness and surface roughness of Si02
di: Mohd Azdi Asis

Study the effect of environmental noise on infrared Tx-Rx circuit signals
di: Mohd Zaihan Ibrahim

Study the effect of bird's beak on fully recessed locos and poly buffered locos using 2 different pad oxide
di: Hafizal Hafiz Sarjoni

The effect of process parameters on metal step coverage for aluminum (AI) by evaporation technique
di: Noraishah Azman

Study and improvement of UniMAP shower room
di: Lau, Iyu Pin

Simulation for forming shallow trench isolation in the Ic using TCAD tools
di: Mohd Faiz Mohd Fauzan

Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
di: Mohd Adam Alias

Study the basic infrared tx-rx circuit design for robot
di: Nik Ahmad Faiz Abdul Jamel

The study of the effect of MOS transistor scaling on the critical device parameters
di: Zazurina Abd Rahman

Study of semi-recessed LOCOS for quasi-nanoscale CMOS devise isolation
di: Mohamad Idzham Abd Sani

Smart door lock system using bluetooth and wi-fi technology
di: Farah Hanan Binti Mohd Yosof
Pubblicazione: (2015)