Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.

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Bibliografske podrobnosti
Glavni avtor:	Mohd Rosydi Zakaria (Author)
Format:	Elektronski Software Database
Jezik:	English
Teme:	Microelectronics.
Oznake:	Označite Brez oznak, prvi označite!

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