Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique

In this final year project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity.

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Detalles Bibliográficos
Autor principal: Mohd Rosydi Zakaria (Autor)
Formato: Electrónico Software Base de Datos
Lenguaje:English
Materias:
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