Study of the temperature effect on thickness and surface roughness of Si02
The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....
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| 第一著者: | |
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| フォーマット: | 電子媒体 ソフトウェア データベース |
| 言語: | English |
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| 要約: | The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process. |
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| 記述事項: | Final Year Project |
| 物理的記述: | 1 CD-ROM 4 3/4 in. |