Study of the temperature effect on thickness and surface roughness of Si02
The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....
Saved in:
Main Author: | Mohd Azdi Asis (Author) |
---|---|
Format: | Electronic Software Database |
Language: | English |
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
by: Mohd Adam Alias -
Method of measurement of LTCC metallization thickness
by: Lee, Soo Khiang -
Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
by: Mohamad Fadzli Ali -
A study on surface roughness and morphology of Gallium Oxide Doped Ba0.5 Sr0.5 Ti03 thin film
by: Fadrul Hisham Mohd Fauzi -
Temperature controller with a digital temperature display
by: Mohd Hafidz Rosli