Study of the temperature effect on thickness and surface roughness of Si02
The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....
Gorde:
Egile nagusia: | Mohd Azdi Asis (Egilea) |
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Formatua: | Baliabide elektronikoa Software Datu-basea |
Hizkuntza: | English |
Gaiak: | |
Etiketak: |
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Antzeko izenburuak
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Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
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Method of measurement of LTCC metallization thickness
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Temperature controller with a digital temperature display
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