Study of the temperature effect on thickness and surface roughness of Si02

Study of the temperature effect on thickness and surface roughness of Si02

The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....

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Sonraí bibleagrafaíochta
Príomhchruthaitheoir:	Mohd Azdi Asis (Údar)
Formáid:	Leictreonach Bogearraí Bunachar sonraí
Teanga:	English
Ábhair:	Microelectronics.
Clibeanna:	Cuir clib leis Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!

Míreanna comhchosúla

Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
de réir: Mohd Adam Alias

Method of measurement of LTCC metallization thickness
de réir: Lee, Soo Khiang

Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
de réir: Mohamad Fadzli Ali

A study on surface roughness and morphology of Gallium Oxide Doped Ba0.5 Sr0.5 Ti03 thin film
de réir: Fadrul Hisham Mohd Fauzi

Temperature controller with a digital temperature display
de réir: Mohd Hafidz Rosli

The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
de réir: Siti Norhaida Abdul Rahman

Effect of diffusion coefficient and junction depth on variation of temperature and energy
de réir: Nur Ruzana Bohari

Effect of annealing temperature and dopant concertration on the surface layer of indium doped Ba0.5Sr0.5Ti03 thin film
de réir: Noor Khairul Anuar Johari

The effect of power density on the surface layer of amorphous thin film
de réir: Ahmad Fadzil Izaharuddin

Single cyrstal SiC capacitive pressure sensor
de réir: Ruhaizi Mohd Hatta

Microfluidic poly-si electrodes capacitor (fabricate & testing)
de réir: Esmal Fhadly Abd Malek

Study the effect of environmental noise on infrared Tx-Rx circuit signals
de réir: Mohd Zaihan Ibrahim

Structural & electrical characterization of Ba(0.5)S(0.5)Tio3 thin films in effect annealing temperature
de réir: Ramadhan Adnan

Design and Analysis of a Wireless Temperature Monitoring System/
de réir: Teoh, Wei Boon
Foilsithe / Cruthaithe: (2011)

The study of the effect of MOS transistor scaling on the critical device parameters
de réir: Zazurina Abd Rahman

Simulation, fabrication and electrical characterization of p-Si capacitor design structure
de réir: Cherly, She Siew Yuet

Improvement of SiGe HBT design and technology performance using device simulation
de réir: Nurradila Rahman

Characterization of electroless under bump metallury for AlSi bond pad composition
de réir: Norahmad Barzrul Basaruddin

Study of the effect of different gases parameter in dry etching process on etch rate profile
de réir: Zaharah Mohamad

Study and design infrared beacon for the blind
de réir: Mohd Fadzlie Rasit

The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
de réir: Yip, Siew Ling

Study the effect of bird's beak on fully recessed locos and poly buffered locos using 2 different pad oxide
de réir: Hafizal Hafiz Sarjoni

Effect of different dielectric materials for ultrathin oxide
de réir: Zarimawaty Zailan

Simulation on effect of different types of channel/ drain engineering structure on MOS device performance
de réir: Norazlina Mohd Amin

Study and design the current mirror using bulk-driven technique for low voltage analog
de réir: Mohd Faidzul Bukhari Mohd Kanafiah

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
de réir: Mohd Rosydi Zakaria

Study and improvement of UniMAP shower room
de réir: Lau, Iyu Pin

Polysilicon process development - the effect of pecvd process parameters on the film characteristics
de réir: Mujahidun Mashuri

Study the basic infrared tx-rx circuit design for robot
de réir: Nik Ahmad Faiz Abdul Jamel

The effect of process parameters on metal step coverage for aluminum (AI) by evaporation technique
de réir: Noraishah Azman

Study of semi-recessed LOCOS for quasi-nanoscale CMOS devise isolation
de réir: Mohamad Idzham Abd Sani

Coherent effect on LOCOS and STI technique for 0.18℗æm CMOS technology using taurus workbench
de réir: Wan Shafie Wan Sulaiman

Study in design of 32 x 4 bit static random access memory (SRAM)
de réir: Nor Bashariah Muhamad Bakhtiar

A Study of Proper Integrated Circuit (IC) Layout Techniques for a Parallel Adder/
de réir: Kau, Zee Shuang
Foilsithe / Cruthaithe: (2011)

Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
de réir: Nur Syuhada Md. Desa

A green house study of a capacitive soil moisture sensor for loamy clay soil
de réir: Nur Umirah Binti Johari
Foilsithe / Cruthaithe: (2015)

Study of acceleratin voltage influence the conical structure during electron beam induced depasition (EBID)
de réir: Muhammad Afif Abdul Rahman

Study of deposition time influence the conical structure during electron beam induced deposition (EBID)
de réir: Mohamad Shahrizal Md Ilias

Future trends in microelectronics : frontiers and innovations /
Foilsithe / Cruthaithe: (2013)

Microelectronics /
de réir: Razavi, Behzad
Foilsithe / Cruthaithe: (2015)