Study of the temperature effect on thickness and surface roughness of Si02
The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....
Zapisane w:
1. autor: | Mohd Azdi Asis (Autor) |
---|---|
Format: | Elektroniczne Oprogramowanie Baza danych |
Język: | English |
Hasła przedmiotowe: | |
Etykiety: |
Dodaj etykietę
Nie ma etykietki, Dołącz pierwszą etykiete!
|
Podobne zapisy
-
Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
od: Mohd Adam Alias -
Method of measurement of LTCC metallization thickness
od: Lee, Soo Khiang -
Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
od: Mohamad Fadzli Ali -
A study on surface roughness and morphology of Gallium Oxide Doped Ba0.5 Sr0.5 Ti03 thin film
od: Fadrul Hisham Mohd Fauzi -
Temperature controller with a digital temperature display
od: Mohd Hafidz Rosli