Study of the temperature effect on thickness and surface roughness of Si02

Study of the temperature effect on thickness and surface roughness of Si02

The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....

Saved in:

書目詳細資料
主要作者:	Mohd Azdi Asis (Author)
格式:	電子軟件 Database
語言:	English
主題:	Microelectronics.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
由: Mohd Adam Alias

Method of measurement of LTCC metallization thickness
由: Lee, Soo Khiang

Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
由: Mohamad Fadzli Ali

A study on surface roughness and morphology of Gallium Oxide Doped Ba0.5 Sr0.5 Ti03 thin film
由: Fadrul Hisham Mohd Fauzi

Temperature controller with a digital temperature display
由: Mohd Hafidz Rosli

The effect of annealing temperature and dopant concentration on the surface layer of vanadium doped barium strontium titanate (BVST) thin film
由: Siti Norhaida Abdul Rahman

Effect of diffusion coefficient and junction depth on variation of temperature and energy
由: Nur Ruzana Bohari

Effect of annealing temperature and dopant concertration on the surface layer of indium doped Ba0.5Sr0.5Ti03 thin film
由: Noor Khairul Anuar Johari

The effect of power density on the surface layer of amorphous thin film
由: Ahmad Fadzil Izaharuddin

Single cyrstal SiC capacitive pressure sensor
由: Ruhaizi Mohd Hatta

Microfluidic poly-si electrodes capacitor (fabricate & testing)
由: Esmal Fhadly Abd Malek

Study the effect of environmental noise on infrared Tx-Rx circuit signals
由: Mohd Zaihan Ibrahim

Structural & electrical characterization of Ba(0.5)S(0.5)Tio3 thin films in effect annealing temperature
由: Ramadhan Adnan

Design and Analysis of a Wireless Temperature Monitoring System/
由: Teoh, Wei Boon
出版: (2011)

The study of the effect of MOS transistor scaling on the critical device parameters
由: Zazurina Abd Rahman

Simulation, fabrication and electrical characterization of p-Si capacitor design structure
由: Cherly, She Siew Yuet

Improvement of SiGe HBT design and technology performance using device simulation
由: Nurradila Rahman

Characterization of electroless under bump metallury for AlSi bond pad composition
由: Norahmad Barzrul Basaruddin

Study of the effect of different gases parameter in dry etching process on etch rate profile
由: Zaharah Mohamad

Study and design infrared beacon for the blind
由: Mohd Fadzlie Rasit

The study on the effect of varing dopant concentration and diffusion time in the design of silicon avalanche diode with minimum VBR of 120+-20%
由: Yip, Siew Ling

Study the effect of bird's beak on fully recessed locos and poly buffered locos using 2 different pad oxide
由: Hafizal Hafiz Sarjoni

Effect of different dielectric materials for ultrathin oxide
由: Zarimawaty Zailan

Simulation on effect of different types of channel/ drain engineering structure on MOS device performance
由: Norazlina Mohd Amin

Study and design the current mirror using bulk-driven technique for low voltage analog
由: Mohd Faidzul Bukhari Mohd Kanafiah

Study on diffusivity of gallium dopant in silicon using spin on dopant (SOD) technique
由: Mohd Rosydi Zakaria

Study and improvement of UniMAP shower room
由: Lau, Iyu Pin

Polysilicon process development - the effect of pecvd process parameters on the film characteristics
由: Mujahidun Mashuri

Study the basic infrared tx-rx circuit design for robot
由: Nik Ahmad Faiz Abdul Jamel

The effect of process parameters on metal step coverage for aluminum (AI) by evaporation technique
由: Noraishah Azman

Study of semi-recessed LOCOS for quasi-nanoscale CMOS devise isolation
由: Mohamad Idzham Abd Sani

Coherent effect on LOCOS and STI technique for 0.18℗æm CMOS technology using taurus workbench
由: Wan Shafie Wan Sulaiman

Study in design of 32 x 4 bit static random access memory (SRAM)
由: Nor Bashariah Muhamad Bakhtiar

A Study of Proper Integrated Circuit (IC) Layout Techniques for a Parallel Adder/
由: Kau, Zee Shuang
出版: (2011)

Study of aspect ratio performance on silicon oxide etching using profiler meter, AFM and SEM
由: Nur Syuhada Md. Desa

A green house study of a capacitive soil moisture sensor for loamy clay soil
由: Nur Umirah Binti Johari
出版: (2015)

Study of acceleratin voltage influence the conical structure during electron beam induced depasition (EBID)
由: Muhammad Afif Abdul Rahman

Study of deposition time influence the conical structure during electron beam induced deposition (EBID)
由: Mohamad Shahrizal Md Ilias

Future trends in microelectronics : frontiers and innovations /
出版: (2013)

Microelectronics /
由: Razavi, Behzad
出版: (2015)