Study of the temperature effect on thickness and surface roughness of Si02
The aims of this final year project is to study the oxidation temperature effect over the oxidation process, to study the reason why the temperature 1100℗ðC which is commonly used for the oxidation process, and to study and find the suitable time to get the optimum result for the oxidation process....
محفوظ في:
المؤلف الرئيسي: | Mohd Azdi Asis (مؤلف) |
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التنسيق: | الكتروني برمجيات قاعدة البيانات |
اللغة: | English |
الموضوعات: | |
الوسوم: |
إضافة وسم
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مواد مشابهة
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Theoretical study, simulation & fabrication on dry oxidation in terms of Si02 layer thinckness, resistivity & surface roughness
بواسطة: Mohd Adam Alias -
Method of measurement of LTCC metallization thickness
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Study of the thickness of the silicon dioxide on wafer using dry and wet oxidation method
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A study on surface roughness and morphology of Gallium Oxide Doped Ba0.5 Sr0.5 Ti03 thin film
بواسطة: Fadrul Hisham Mohd Fauzi -
Temperature controller with a digital temperature display
بواسطة: Mohd Hafidz Rosli