Study of the effect of different gases parameter in dry etching process on etch rate profile
The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reacti...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | الكتروني برمجيات قاعدة البيانات |
| اللغة: | English |
| الموضوعات: | |
| الوسوم: |
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| الملخص: | The principal focus of this project is dry etching technique by using the Inductively Couple Plasma -Reactive Ion Etching (ICP-RIE). This final year project is about to understand and control the equipment for dry etches process. The equipment in dry etch process is inductively couple plasma- reactive ion etching (ICP-RIE). |
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| وصف المادة: | Final Year Project |
| وصف مادي: | 1 CD-ROM 4 3/4 in. |